Indium- containing soot or slag (indium is mainly MeO), etc., is mixed with H 2 SO 4 , and is put into a boiling roaster or rotary kiln for sulphating and roasting to obtain In 2 (SO 4 ), and at the same time volatilizing to remove arsenic and fluorine, etc. Dry sulphation, China and Kazakhstan and other countries use wet type.
In 2 O 3 +3H 2 SO 4 ==== In 2 (SO 4 ) 3 +3H 2 O↑
Adding 110% concentrated sulfuric acid and 3% charcoal to the soot containing In 0.006%, Ge 0.004%, Tl0.056% and As 1.23%, granulating 3~5mm pellets, and putting into boiling boiling furnace at 300 °C baked, the indium, germanium, lead and thallium, zinc sulfate into. 85%~95% of arsenic, fluorine and selenium are volatilized into the flue gas, and can be comprehensively used after dust collection. In 2 (SO 4 ) 3 baking sand was dissolved in water at 80 ° C, liquid-solid ratio of 3, and terminal acid 10 g / L for 2 h. The obtained solution containing In 0.012 g / L and Tl 0.18 / L was neutralized with ZnO to pH = 3 ~4 hydrolysis to get In(OH) 3 :
In 2 (SO 4 ) 3 +6H 2 O ==== 2In(OH) 3 ↓+3H 2 SO 4
With H 2 SO 4 (control final acid H 2 SO 4 of 30 ~ 40g / L) dissolve the precipitate, the indium into the solution, the addition of copper sulfate and iron scrap arsenic removal when heated to 70 ~ 80 ℃, after filtration Residual acid H 2 SO 4 5g/L, substituted with zinc powder at 50~70 °C to obtain sponge indium, which was decomposed by H 2 SO 4 and electrolyzed to obtain 99% indium. The recovery rate is about 80%. Kazakhstan's Usti-Kamennogorsk Pb-Zn joint venture uses this method to recover indium.
Wet sulphation pollutes the environment and the human body, so the development of dry sulphate roasting at a temperature of 500 ~ 600 ° C with FeSO 4 generation concentrated H 2 SO 4 :
2In 2 O 3 +6FeSO 4 +3/2O 2 ==== 2In 2 (SO 4 ) 3 +Fe 2 O 3
CNI offer wavelength tunable Laser, the output wavelengths can be changed continuously within a certain range. Tunable lasers come with good beam quality, high stability and long life time, they are widely used in spectroscopy, photochemistry, medicine, biology, integrated optics, laser processing,etc.
Specification
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Tunable Diode Laser |
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| Tunable Wavelength Band | Model | Output Power | Specifical |
| 403~407 nm | TUN- 403~407 | 1~30 mW | <0.1 nm |
| 408~412 nm | TUN- 408~412 | 1~30 mW | <0.1 nm |
| 448~452 nm | TUN- 448~452 | 1~10 mW | <0.1 nm |
| 518~522 nm | TUN- 518~522 | 1~10 mW | <0.1 nm |
| 634~643 nm | TUN- 634~643 | 1~10 mW | <0.1 nm |
| 652~658 nm | TUN- 652~658 | 1~10 mW | <0.1 nm |
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Tunable Ti : Sapphire Laser |
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| Tunable Wavelength Band | Model | Output Power | Specifical |
| 390~408 nm | TUN-TiA-393~408 | 1~1000 mW | <2 nm |
| 770~840 nm | TUN-TiN-770~840 | 1~400 mW | <40 pm |
| 770~840 nm | TUN-Ti-770~840 | 1~1000 mW | <2 nm |
| 770~840 nm | TUN-TiA--770~840 | 1~1300 mW | <2 nm |
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Tunable Infired Laser |
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| Tunable Wavelength Band | Model | Output Power | Specifical |
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1400~1800 nm |
TUN-W-1400~1800 | 1~2000 mW | <2 nm |
| 2600~4450 nm | TUN-W-2600~4450 | 1~1000 mW | <2 nm |
Testing data
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Pulse width 34 ns testing at 10kHz
Ti: Sapphire Laser |
Power stability < 3% Ti: Sapphire Laser |
Tunable Laser Diodes,Tunable Laser,CW Tunable Laser,Finisar Tunable Laser
Changchun New Industries Optoelectronics Technology Co., Ltd. , https://www.lasersciences.com