With the support of National Key Project 02, graphene from the Shanghai Institute of Microsystem (CAS) made another important progress: the rapid growth of AB graded double-layer graphene (ABBG) on Cu-Ni alloy substrate with Cu vapor assisted, Typical single crystal domain size of about 300 microns, the growth time of about 10 minutes, the speed increased about an order of magnitude than previously reported. The research paper was published online at small on February 24, 2016 (C. Yang, et al., Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy, DOI: 10.1002 / smll. ").
ABBG can generate tunable bandgap through electric field, which is of great value to the application of graphene in logic devices and optoelectronic devices. However, how to rapidly grow large-domain ABBG remains a technical problem to be solved urgently. Due to the self-limiting effect, the surface catalysis mechanism of traditional Cu substrate seriously hinders the growth of the second layer of graphene, while the dissolution mechanism on the Ni substrate has the problems of uneven number of layers and difficulty in controlling the size of the nuclei.
The graphene research team of microsystems recently reported the first time in the world using Cu-Ni alloy for the rapid growth of 1.5-inch graphene single crystal. The paper was published on Nature Material (DOI: 10.1038 / nmat4477). On this basis, by introducing copper vapor, the rapid growth of large-domain ABBG is achieved. The involvement of copper vapor reduces the growth rate of the first graphene on the surface of the Cu-Ni alloy substrate and increases the concentration of active carbon atoms incorporated into the substrate. The carbon atoms incorporated into the substrate are precipitated by the isothermal deposition of the first layer of graphite Alkene has a strict orientation of the large crystal domain ABBG. Compared with the existing literature, the synergistic effect between Cu steam and Cu-Ni alloy increases the growth rate of ABBG by about one order of magnitude. This research has opened up an important technical route for the scale preparation of ABBG, which laid the foundation for exploring the application of AB stacking double graphene in the direction of microelectronics and optoelectronic devices.
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